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The Bipolar
Transistor
The
invention of the
bipolar junction transistor in 1948 by Bardeen,
Brattain, and Shockley paved the way for the subsequent arrival of the
integrated circuit, which revolutionized the semiconductor industry.
The bipolar transistor is a
three-terminal
device consisting of 3
layers of
alternating n- and p-type materials referred to as the
emitter,
base, and
collector.
Its structure basically consists of two back-to-back diodes, one
between the emitter and base and the other between the base and
collector.
There
are two types of bipolar transistor:
the
NPN and the
PNP.
In the NPN transistor, the base is composed of a p-type material
and is sandwiched by an n-type emitter and an n-type collector.
In the PNP, the base is n-type while the emitter and collector
are p-type.
Figure 1. Structure of a planar vertical NPN bipolar
transistor
The bipolar
transistor works by yielding a
high collector current when a
relatively small current is forced into its
base.
Since Ib is relatively much smaller than Ic, a small variation in
Ib results in a much larger variation in Ic.
This, in effect, is
current
amplification,
with the current gain known as the
beta
of the transistor. The currents going into and out of
the emitter, base, and collector follow Kirchoff's current law:
Ib=Ie-Ic.
Since Ic is much greater than Ib, Ie is very close in value to Ic.
In short, a large current flows from the emitter to the collector
of a transistor whenever the base receives some input current.
The transistor is therefore very useful as a switch or as an
amplifier.
How
the transistor operates (and therefore used) depends greatly on how it
is electrically stimulated, or
biased.
The transistor may be operated in three different regions:
saturation,
cut-off, and
active.
See Also:
MOSFET; JFET
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