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Single Crystal Growing for Wafer Production (Page 2 of 2)

            

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Float Zone Crystal Growth

  

The float zone (FZ) process is another method for growing single-crystal silicon. It involves the passing of a molten zone through a polysilicon rod that approximately has the same dimensions as the final ingot.  The purity of an ingot produced by the FZ process is higher than that of an ingot produced by the CZ process. As such, devices that require ultrapure starting silicon substrates should use wafers produced using the FZ method.

   

 

The FZ process consists of the following steps.

1.  A polysilicon rod is mounted vertically inside a chamber, which may be under vacuum or filled with an inert gas.

2.  A needle-eye coil that can run through the rod is activated to provide RF power to the rod, melting a 2-cm long zone in the rod. This molten zone can be maintained in stable liquid form by the coil.

3. The coil is then moved through the rod, and the molten zone moves along with it.

4. The movement of the molten zone through the entire length of the rod purifies the rod and forms the near-perfect single crystal. 

        

FZ growing equipment can also use a stationary coil, coupled with a mechanism that can move the silicon rod through it.

              

Fig. 2.  Examples of Float Zone Crystal Growing Equipment

                                

After the single-crystal silicon ingot has been manufactured, it undergoes a routine evaluation of its resistivity, impurity content, crystal perfection, size and weight.  It is then ground using diamond wheels to make it a perfect cylinder that has the right diameter. It then undergoes an etching process to remove the mechanical imperfections left by the grinding process. 

     

Fig. 3.  A Single-Crystal Silicon Rod

                          

The cylindrical ingot is then given one or more 'flats' by another round of grinding. The largest flat, called the primary flat, is used by automated wafer handling systems for alignment.  Flats (primary and secondary) are also used to identify the crystallographic orientation and conductivity of the wafer.

   

The ingot is then sawn into thin wafer slices, each of which will be subjected to further etching and polishing until it is ready for use as substrates for VLSI fabrication.  The above process of silicon growing, grinding, shaping, sawing, etching, and polishing to produce input wafers is known as wafering.

 

Fig. 4.  An ingot slicer (left) and a wafer grinder/polisher (right)

   

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See also:   Specifications for Si WafersWafers for Wafer Fab Czochralski ProcessFloat Zone Process

Crystal DefectsIC Manufacturing Semiconductor WafersWhat is a semiconductor?

   

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