![]() |
||||||||||||||||||||||||||||||
|
Semiconductor
Packaging: Die Attach Process (Page 2)
<Back to the Die Attach
Main Page>
Eutectic Die Attach
Eutectic die
attach, which is commonly employed in hermetic packages, uses a
eutectic
alloy
to attach the die to the cavity. A eutectic alloy is an alloy with the
lowest
melting point possible for the metals
combined in the alloy. The Au-Si eutectic alloy is the most commonly used
die attach alloy in semiconductor packaging.
A gold
preform is placed on
top of the cavity while the package is being heated. When the die is
mounted over this gold preform, Si from the die backside
diffuses into
the gold preform, forming Au-Si alloy. As more Si diffuses into
the gold preform, the Si-to-Au ratio of the alloy increases, until such
time that the eutectic ratio is achieved. The Au-Si eutectic alloy has
2.85% of Si and melts at
about
363 degrees C.
Thus, the die attach temperature must be reasonably higher than this
temperature to achieve the eutectic melting point. At this point, the
alloy melts, attaching the die to the cavity.
To optimize
the die attachment, the operator
'scrubs'
the die into the eutectic alloy for
even distribution of the die attach alloy. Eventually the diffusion of
silicon atoms into the gold preform exceeds the eutectic limit, and the
die attach alloy begins to solidify once again. The package is then allowed
to cool down to completely solidify the eutectic alloy and complete the die attach
process.
Aside from
the Au-Si alloy, semiconductor assembly may employ other metal alloys
for eutectic die attach. Table 1 lists some of the other
alloys used in eutectic die attach preforms.
Table 1.
Compositions and Melting Points of some Eutectic Die Attach Preforms
Composition
Temperature (deg C)
Liquidus
Solidus
80% Au,
20% Sn
280
280
92.5% Pb,
2.5% Ag, 5% In
300
-
97.5% Pb,
1.5% Ag, 1% Sn
309
309
95% Pb,
5% Sn
314
310
88% Au,
12% Ge
356
356
98% Au,
2% Si
800
370
100% Au
1063
1063
Effects of Die Attach Voids
Regardless of
die attach process, the presence of voids in the die attach material
affects the quality and reliability of the device itself. Large die
attach voids result in low shear strength and low thermal/electrical
conductivity, and produce large
die stresses
that may lead
to
die cracking.
Small voids provide sufficient shear strength and electrical/thermal
conductivity, while 'cushioning' large dice from stresses. Total
absence of voids may mean high strength, but it may also induce large
dice to crack. The strength of die attachment is measured using the
die shear test.
Figure 3.
X-ray photo of large epoxy die attach voids; Au-Si eutectic voids are
more visible during x-ray inspection
because of the higher density of Au-Si
<Back to Page 1 - Die Attach
Main Page>
Front-End Assembly
Links:
Wafer Backgrind;
Die Preparation;
Die Attach;
Wirebonding;
Die Overcoat
See Also:
Copyright
©
2001-2006
www.SiliconFarEast.com.
All Rights Reserved. |
||||||||||||||||||||||||||||||