Semiconductor Failure Analysis (FA) Techniques

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Failure Analysis (FA) Techniques

Failure Analysis Techniques, or simply FA Techniques, are the individual analytical steps performed to complete the failure analysis process. Each FA technique in the FA process is designed to provide its own, specialized information that will contribute to the determination of the failure mechanism of the sample. Although FA techniques are generally independent of each other, their results must nonetheless be consistent and corroborative in order to arrive at a strong conclusion for the FA cycle.

During the FA process, all applicable non-destructive FA techniques must be performed prior to the conduct of any destructive FA technique. An FA technique that alters a sample permanently in whatever way (whether visual, mechanical, chemical, or electrical) is considered destructive. On the other hand, non-destructive techniques are those which do not cause any permanent change in the sample, ideally speaking. Table 1 shows links to FA techniques commonly used in the semiconductor industry.

Table 1. Semiconductor FA Techniques

Non-destructive Techniques
Technique	Application
Failure Verification	validation of reported failure
Optical Microscopy	external or internal visual inspection
X-ray Radiography	internal x-ray imaging
Curve Tracing	current-voltage characterization
Hermeticity Testing	check for hermetic sealing
SAM	detection of delaminations
Destructive Techniques
Technique	Application
Decapsulation	opening of the IC package
Sectioning	cross-sectioning of the sample
Hot Spot Detection	detection of heat-generating defects
LEM	detection of light-emitting defects
Microprobing	direct electrical analysis of the die circuit
SEM/TEM	high magnification real-time imaging
EDX/WDX	elemental analysis
Focused Ion Beam	high resolution die sectioning/imaging
FTIR Spectroscopy	chemical analysis
Auger Analysis	surface analysis
SIMS	compositional analysis
LIMS	compositional analysis
ESCA or XPS	surface analysis
AFM / STM	high-resolution probe imaging
EBIC	induced current imaging of defects
OBIC	induced current imaging of defects
Chromatography	chemical analysis
RGA	residual gas/moisture analysis

Note that some non-destructive techniques can become destructive if improperly performed on the sample. Examples of these are curve tracing and bench testing, which can lead to electrical overstressing of the sample if improperly undertaken.

FA Techniques: Failure Verification; Optical Inspection; X-ray Radiography; Curve Tracing; Hermeticity Testing;

Decapsulation; Sectioning; Hot Spot Detection; LEM; Microprobing; Die Delayering; SEM / TEM; EDX / WDX;

SAM; Focused Ion Beam; FTIR Spectroscopy; Auger Analysis; SIMS / LIMS; ESCA or XPS; AFM / STM;

EBIC / OBIC; Chromatography; RGA; Other FA Techniques

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