Custom Search

               

Flash Memory - Page 2 of 2

        

 

     

<Back to Page 1>

           

 

A typical MLC consists of a single transistor with direct electrical connections to its gate, source, and drain that allow very precise control of the charging of the cell's floating gate.  For a multi-level cell to work, it must be able to deposit charge with precision, sense charge with precision, and store charge over time. High-precision charging and charge sensing are the key to a MLC's ability to distinguish several charge levels.  Table 1 illustrates how a 2-bit multi-level cell assigns digital codes to 4 different charge voltage levels.

                     

                

Table 1.  2-Bit Intel MLC Digital Code Assignment

Charge Level

Digital Code

Level 3

00

Level 2

01

Level 1

10

Level 0

11

  

                

MLC programming is accomplished by charging the floating gate through a precise process of Channel Hot-Electron (CHE) injection.  During programming, the source of the MLC transistor is usually grounded. Column decoding of the MLC provides direct bitline connection to the drain which is pulsed at a constant voltage.  Row decoding of the MLC, on the other hand, provides direct wordline connection that causes the MLC transistor gate to be connected to an internally generated supply voltage.  This direct and precise control of the drain and gate is critical to the correct charging of the floating gate and, hence, correct storage of information.

   

Reading the contents of multi-level cells involves highly precise sensing of the amount of charge in the floating gate, measured in terms of cell currents that have an inverse relationship with the Vth. The sensed currents are compared to reference currents, with the comparison results inputted to a logic circuit that encodes them into the corresponding digital data.

        

Flash memory erasure is achieved by 'discharging' the floating gate through a phenomenon known as Fowler-Nordheim tunneling, wherein electrons from the floating gate pass through the thin dielectric layer and get dissipated at the source of the memory cell transistor.

      

Flash memory is used in a variety of applications such as: personal and notebook computers, digital cell phones, digital cameras, portable memory devices, LAN switches, embedded controllers, etc.

        

<Back to Page 1>

           

Primary Reference: www.intel.com

 

 

      

See Also:  What is a Semiconductor?EPROMsSRAMsDRAMs

        

HOME

        

Copyright © 2005 www.SiliconFarEast.com. All Rights Reserved.