Hot Carriers; Hot Electrons

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Hot Carrier Effects (Page 2 of 3)

Channel hot electron (CHE) injection occurs when both the gate voltage and the drain voltage are significantly higher than the source voltage, with VG≈VD. Channel carriers that travel from the source to the drain are sometimes driven towards the gate oxide even before they reach the drain because of the high gate voltage.

Figure 2. CHE injection involves propelling of carriers in the

channel toward the oxide even before they reach the drain area;

source: Hitachi Semiconductor Reliability Handbook

Substrate hot electron (SHE) injection occurs when the substrate back bias is very positive or very negative, i.e., |VB|>> 0. Under this condition, carriers of one type in the substrate are driven by the substrate field toward the Si-SiO2 interface. As they move toward the substrate-oxide interface, they further gain kinetic energy from the high field in surface depletion region. They eventually overcome the surface energy barrier and get injected into the gate oxide, where some of them are trapped.

Figure 3. SHE injection involves trapping of carriers from the

substrate; source: Hitachi Semiconductor Reliability Handbook

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