Hot carrier effects are brought about or aggravated by reductions in device dimensions without corresponding reductions in operating voltages, resulting in higher electric fields internal to the device. Problems due to hot carrier injection therefore constitute a major obstacle towards higher circuit densities. Recent studies have even shown that voltage reduction alone will not eliminate hot carrier effects, which were observed to manifest even at reduced drain voltages, e.g., 1.8 V.  

Thus, optimum design of devices to minimize, if not prevent, hot carrier effects is the best solution for hot carrier problems. Common design techniques for preventing hot carrier effects include: 1) increase in channel lengths; 2) n+ / n- double diffusion of sources and drains; 3)  use of graded drain junctions; 4) introduction of self-aligned n- regions between the channel and the n+ junctions to create an offset gate; and 5) use of buried p+ channels.