Properties of Si, Ge, and GaAs at 300K         

        

Properties

Si

Ge

GaAs

Atoms/cm3

5.0 x 1022

4.42 x 1022

4.42 x 1022

Atomic Weight

28.09

72.60

144.63

Breakdown Field

approx. 3 x 105

approx. 1 x 105

approx. 4 x 105

Crystal Structure

Diamond

Diamond

Zincblende

Density (g/cm3)

2.328

5.3267

5.32

Dielectric Constant

11.9

16.0

13.1

Effective Density of States in the Conduction Band, Nc (cm-3)

2.8 x 1019

1.04 x 1019

4.7 x 1017

Effective Density of States in the Valence Band, Nv (cm-3)

1.04 x 1019

6.0 x 1018

7.0 x 1018

Electron Affinity (V)

4.05

4.0

4.07

Energy Gap at 300K (eV)

1.12

0.66

1.424

Intrinsic Carrier Concentration (cm-3)

1.45 x 1010

2.4 x 1013

1.79 x 106

Intrinsic Debye Length (microns)

24

0.68

2250

Intrinsic Resistivity (ohm-cm)

2.3 x 105

47

108

Lattice Constant (angstroms)

5.43095

5.64613

5.6533

Linear Coefficient of Thermal Expansion,

ΔL/L/ΔT (1/deg C)

2.6 x 10-6

5.8 x 10-6

6.86 x 10-6

Melting Point (deg C)

1415

937

1238

Minority Carrier Lifetime (s)

2.5 x 10-3

approx. 10-3

approx. 10-8

Mobility (Drift)

(cm2/V-s)

n, electrons

1500

3900

8500

Mobility (Drift)

(cm2/V-s)

p, holes

475

1900

400

Optical Phonon Energy (eV)

0.063

0.037

0.035

Phonon Mean Free Path (angstroms)

76 (electron)

55 (hole)

105

58

Specific Heat       

(J/g-deg C)

0.7

0.31

0.35

Thermal Conductivity at 300 K

(W/cm-degC)

1.5

0.6

0.46

Thermal Diffusivity (cm2/sec)

0.9

0.36

0.24

Vapor Pressure (Pa)

1 at 1650 deg C;

10-6 at 900 deg C

1 at 1330 deg C;

10-6 at 760 deg C

100 at 1050 deg C;

1 at 900 deg C

   

   

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